作者leg1234 (leg)
看板Electronics
标题Re: 请问OP用BJT和MOS的优缺点在那?
时间Wed Dec 14 07:38:09 2005
※ 引述《[email protected] (朋)》之铭言：
: ※ 引述《[email protected] (BME新生)》之铭言：
: > BJT特性有容易受温度变化
: > MOS参数中无温度变化系数，故较不易受环境影响
: 同是矽材料, PN 的接面, 温度影响不可免.
: 影响有多大? 电路可抵消, 书中自有答案说.
In silicon, BJT has higher transconductance and an ability to build temperture
independant reference; MOSFET has better linearity and lower power dissipation
in digital circuits which helps to integrated as a mixed signal chip.
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